天津理工大学功能晶体研究院讲师，硕士生导师。2011年于西北农林科技大学获得工学学士学位，同年被保送至西安交通大学进行硕博连读。博士在读期间（2015-2016年），至德国莱布尼茨晶体生长研究所（IKZ）进行博士生联合培养，并于2017年获得工学博士学位。之后在江苏大学能源与动力工程学院，任讲师。2022年调入天津理工大学功能晶体研究院，任讲师。

主要研究领域为半导体晶体，特别是液相法/PVT法SiC、直拉法单晶硅的晶体生长、热场设计及工艺优化。迄今为止，已发表学术论文20余篇，其中SCI一作/通讯作者论文10篇。主持江苏省自然科学基金青年基金项目、中国博士后科学基金面上项目、江苏省博士后科学基金、江苏省绿色过程装备重点实验室开发课题等项目。曾获西安交通大学优秀研究生、第16届CSPV会议优秀论文奖、江苏省光伏科学技术三等奖等奖励。

主持科研项目

1.      江苏省自然科学基金青年基金项目（BK20210762）直拉法单晶硅生长过程中氧杂质的输运机理及优化调控方法（20万） 2021.7-2024.6

2.      中国博士后科学基金（2019M651731）电子级单晶硅提拉生长过程中氧杂质的智能优化控制 (8万)   2019.6-2020.12

3.      江苏省博士后科学基金（2018K100C）准单晶硅铸锭定向凝固过程中晶粒生长机理研究 (2万) 2019.6-2020.12

4.      江苏省绿色过程装备重点实验室开发课题（GPE202003）单晶硅提拉生长过程中氧杂质的智能优化调控（1.5万）  2020.7-2022.6

发表论文

1.           Xiaofang Qi,Junlei Wang, Yong Wen, Wencheng Ma^*. Effect of   water-cooled jacket on the oxygen transport during the Czochralski silicon   crystal growth process. Journal of Crystal Growth,609 (2023) 127139.

2.           Fuchang Li, Lei He, Zhaoyang Yan, Xiaofang   Qi^*, Wencheng Ma, Jianli Chen, Yongkuan Xu, Zhanggui Hu.   Effects of crystal rotation on the carbon transport in the top-seeded   solution growth of SiC single crystal. Journal of Crystal Growth, 607 (2023)   127112.

3.           Shanshan Tang, Xiaofang Qi^*,   Chuanbo Chang, Quanzhi Wang, Lijun Liu^*. Application of a new   grain boundary technology for quasi-single crystalline silicon ingots.   Journal of Crystal Growth, 607 (2023)127109.

4.           Xiaofang Qi, Wencheng Ma, Lijun Liu^*. Effect of internal radiation   on heat transfer during Ti:sapphire crystal growth process by heat exchanger   method. International Journal of Heat and Mass Transfer, 170 (2021) 121000.

5.           Xiaofang Qi, Yiwen Xue WenjiaSu, et al. Effect of argon flow on oxygen and   carbon coupled transport in an industrial directional solidification furnace   for crystalline silicon ingots. Crystals, 11(4) (2021) 421.

6.           Xiaofang Qi, Wencheng Ma, Yifan Dang, et al.Optimization   of the melt/crystal interface shape and oxygen concentration during the   Czochralski silicon crystal growth process using an artificial neural network   and a genetic algorithm. Journal of Crystal Growth,548   (2020) 125828.

7.           Xiaofang Qi,Lijun Liu,ThècleRiberi-Béridot, et al.   Simulation of grain evolution in solidification of silicon on meso-scopic   scale. Computational Materials Science, 159 (2019) 432-439.

8.           Xiaofang Qi,Lijun Liu^*,Wencheng Ma. Effects of furnace pressure   on oxygen and carbon coupled transport in an industrial directional solidification   furnace for crystalline silicon ingots. Journal of Crystal Growth, 468 (2017)   933-938.

9.           Xiaofang Qi, Qinghua Yu, Wenhan Zhao, et al. Improved seeded directional solidification process   for producing high-efficiency multi-crystalline silicon ingots for solar cells.   Solar Energy Materials and Solar Cells, 130 (2014) 118–123.

10.     Xiaofang Qi, Wenhan Zhao, Lijun   Liu^*, et al. Optimization via simulation of a seeded directional   solidification process for quasi-single crystalline silicon ingots by insulation   partition design. Journal of Crystal Growth, 398 ( 2014) 5-12.

11.     Lijun Liu^*,Xiaofang Qi,Wencheng Ma, et al. Control of the gas flow   in an industrial directional solidification furnace for production of high   purity multicrystalline silicon ingots. International Journal of Photoenergy,   513639 (2015) 1-10.

奖励与荣誉

西安交通大学优秀研究生、第16届CSPV会议优秀论文奖、江苏省光伏科学技术三等奖